View 4N40_369849.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

4N39X, 4N40X 4N39, 4N40
PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form
2.54 7.0 6.0 7.62 max. 1 2 3
Dimensions in mm 6 5 4 8.3 max.
DESCRIPTION The 4N39, 4N40 are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Surge Anode Current (5.0 A) l High Blocking Voltage (200V*1, 400V*1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available
0.5 min. 0.48
5.1 max. 3.9 3.1 0.25 15 Max
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Forward Current (Peak) (1s pulse, 300pps) Reverse Voltage Power Dissipation DETECTOR Peak Forward Voltage 4N39 4N40 Peak Reverse Gate Voltage RMS On-state Current Peak On-state Current (100s, 1% duty cycle) Surge Current (10ms) Power Dissipation 200V*1 400V*1 6V 300mA 10A 5A 300mW 60mA 3A 6V 100mW
APPLICATIONS l 10A, T2L compatible, Solid State Relay l 25W Logic Indicator Lamp Driver l 400V Symmetrical transistor coupler
OPTION SM
SURFACE MOUNT OPTION G
8.3 max
1.2 0.6 10.2 9.5
1.4 0.9
0.26 10.16
*1 IMPORTANT : A resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (RGK < 56k) ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB91033AAS/A3
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
5/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Peak Off-state Voltage (VDM ) 4N39 4N40 Peak Reverse Voltage (VRM ) 4N39 4N40 On-state Voltage (VTM ) Off-state Current (IDM ) 4N39 4N40 Reverse Current (IR ) 4N39 4N40 Holding Current (IH) Coupled Input Current to Trigger ( IFT ) (note 2) Turn on Time ( ton ) Coupled dv/dt, Input to Output (dv/dt) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf 500 5300 7500 1011 2 MIN TYP MAX UNITS 1.2 3 1.5 V V TEST CONDITION IF = 10mA IR = 10A RGK=10k, ID= 50A, TA= 100C RGK=10k,ID=150A, TA=100C RGK=10k, ID= 50A, TA=100C RGK=10k,ID=150A, TA=100C ITM = 300mA RGK=10k, IF= 0, VDM=200V, TA=100C RGK=10k, IF= 0, VDM=400V, TA=100C RGK=10k, IF= 0, VDM=200V, TA=100C RGK=10k, IF= 0, VDM=400V, TA=100C RGK=27k, VFX=50V
Output (note 2)
200 400 200 400 1.1 1.3
50 150 50 150 1
V V V V V
A A A A
mA
30 14 50
mA mA s V/s VRMS VPK pF
VAK =50V, RGK=10k VAK=100V, RGK=27k RGK=10k, IF=30m, VAK=50V, RL=200 See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
5/12/00
DB91033-AAS/A3
Input Current to Trigger vs. Anode to Cathode Voltage
FT
100
FT
Input Current to Trigger vs. Ambient Temperature 12 10 1k 4 2 10k 1.0 27k 0.4 0.2 56k 0 Normalized to VAK = 50V, RGK =10k, TA = 25 C 20 40 60 80 100 120 Normalized input current to trigger I RGK =300
Normalized input current to trigger I
40 20 10 1k 4 2 1.0 27k 0.4 0.2 0.1 1 56k 5 10 10k RGK =300
Normalized to VAK = 50V RGK =10k TA = 25 C
50 100 200
0.1 -60 -40 -20
Anode to cathode voltage VAK ( V ) Input Current to Trigger Distribution vs. Ambient Temperature
FT
Ambient temperature TA ( C ) Input Current to Trigger vs. Pulse Width
FT
10 4 2 1 10th percentile 0.4 0.2 0.1
90th percentile
Normalized input current to trigger I
Normalized input current to trigger I
Normalized to VAK = 50V R =10k = 25 C A
100 40 20 10 4 2 1 0.4 0.2 0.1 1 2 56k RGK =300 1k
Normalized to VAK = 50V RGK =10k TA = 25 C
27k
10k
-40 -20 0 20 40 60 80 100 Ambient temperature TA ( C ) Turn on Time vs. Input Current 24 22 20 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 Input current IF (mA)
5/12/00
4 6 10 20 40 60 100 200 400 1000 Pulse width ( s ) Input Characteristics IF vs. VF
10k
RGK=1k
Turn on time t on (s)
VAK = 50V ton = td + tr tr = 1s Forward current I F (mA)
100 40 20 10 4 2 1 0.4 0.2 0.1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V )
DB91033-AAS/A3
25C 100C -55C
56k
Holding Current vs. Ambient Temperature Transient thermal impedance ( C / Watt ) 10000 4000 2000 1000 400 200 100 40 20 10 10k 27k 56k -60 -40 -20 0 20 40 60 80 100 120 RGK =300 1k Normalized to VAK = 50V RGK =10k TA = 25 C 1000
Maximum Transient Thermal Impedence
1. Lead temperature measured at the widest portion of the SCR anode lead. 400 2. Ambient temperature measured at 200 a point 1/2" from the device.
Holding current I H ( A)
100 40 20 10 4 2 1 0.001
Junction to ambient
n to lea d
0.01
0.1
1 2 4 10
Junctio
100
Ambient temperature TA ( C ) Off State Forward Current vs. Ambient Temperature Normalized forward current off state ( I D ) Maximum allowable temperature ( C ) 10000 4000 2000 1000 400 200 100 40 20 10 4 2 1 0 25 50 75 100 Ambient temperature TA ( C ) dV/dt vs. Ambient temperature 1000 400 100 40 10 4 1 0.4 56k 0.1 25 50 75 100 0 Ambient temperature TA ( C ) 27k 1k 10k RGK =300 2
Junction temperature = 100C
Time (seconds) On State Current vs. Maximum Allowable Temperature 100 90 80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 On state current ( ) 1.0 1. 2. 3. 4.
1. Ambient temp. half-sine wave avg 2. Ambient temp. DC current 3. Anode lead temp. half-sine wave avg 4. Anode lead temp. DC current
Normalized to VAK = 50V TA = 25 C
VAK = 400V VAK = 200V VAK = 50V
Critical rate of rise applied forward voltage dV/dt (V/ s)
On State Characteristics
1 0.4 On state current I T (A) 0.2 0.1 0.04 0.02 0.01
Junction temperature = 25C
Increases to forward breakover voltage 1 2 3 On state voltage VT ( V ) 4
DB91033-AAS/A3
5/12/00

▲Up To Search▲

Price & Availability of 4N40

	To Download 4N40 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .